Modules 1and 2:
(1) RCA Clean, Wet and Dry Oxidation, Ellipsometry
Goals:
- Learn the RCA cleaning procedure, which is designed to remove impurities
such as SiO2, dust, organic, ionic, and metal contaminants
- Determine silicon oxidation kinetics as a function of ambient (steam or O2)
and temperature (950 - 1100 ºC).
- Learn how to characterize film thickness using ellipsometry.
Procedures
(2) Spin Photoresist, Ashing, Profilometry
Goals:
- Learn how to apply and bake photoresist.
- Determine photoresist thickness as a function of spin speed.
- Learn how to operate plasma etcher.
- Determine ashing rate as a function plasma power, flowrate, pressure.
- Learn how to characterize film thickness using profilometry.
Procedures