PPT Slide
CHEN435/PHGN435: Interdisciplinary Silicon Processing Laboratory
Easy to Pattern and Selectively Etch
- HF preferentially etches SiO2, not Si
- Also plasma etch CHF3
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Thermal Stability: Tm = 1600 ºC
Protects Surface
- Inert to most chemicals
- Good diffusion barrier
Great Dielectric (Insulator)
- 9 eV Bandgap
- Dielectric Strength = 107 V/cm
- r ~ 1015 W-cm , Silicon 1 - 20 W-cm