PPT Slide
CHEN435/PHGN435: Interdisciplinary Silicon Processing Laboratory
2 Flavors
- Wet: Si + 2 H2O => SiO2 + 2 H2
- Dry: Si + O2 => SiO2
- High Temp: 900 - 1200 ºC
-
Wet Oxidation
- Fast rate/lower quality
- Field Oxides > 3000 Å Thick
Dry Oxidation
- Slower rate/High Quality
- Gate Oxides: 30 - 100 Å, Capacitors
Consumes Silicon
- # of Si atoms in SiO3 = # Si atoms consumed
- Different Density: 0.44xox =
- 1000 Å of SiO2 consumes 440 Å of Si