PPT Slide
CHEN435/PHGN435: Interdisciplinary Silicon Processing Laboratory
Chemical Vapor Deposition
- Thermal or Plasma Aided
- After silicon no longer exposed
- No silicon comsumed
- Quality inferior to lower oxides
- Deposition temperatures substantially reduced
-
Thermal CVD (Ts < 350 ºC)
- Ts < 350 ºC
- TEOS and Ozone(O3)
- Tetraethoxysilane/Tetraethylorthosilicate
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Plasma-enhanced CVD (PECVD)