Start with two new wafers. Using a diamond scribe cleave each wafer into 9 pieces
of equal size.
To prepare the pieces for oxidation clean them using the RCA
procedure.
A goal of this lab is to determine the oxidation kinetics as a function of temperature
and ambient. You will oxidize your pieces using 2 dry O2 furnances and 1
wet oxidation furnace at the thermal proccesing station.
Although kinetics for both processes are published (see Campbell), there are always
variations associated with furnace type, flow rates, etc. Through this experiment we will
characterize our furnaces.
To give us the most complete picture each group will use a different furnace
temperature:
Group A: 1000 ºC
Group B: 1050 ºC
Group C: 1100 ºC
The details of each process are located on the dry oxide
and wet oxide webpages, respectively. We will determine the
oxidation times in lab.
While you wafers are oxidizing we will learn how to measure oxide thickness with the
Gaertner ellipsometer.