Your goals this week are to develop an optimum photolithography procedure and determine
oxide etch rates.
I. Photolithography
Begin withpieces of previuosly oxidized silicon. Coat with photoresist and softbake as
instructed in the photolithography procedure. Based on your
previous lab choose the spin speed that will deposit ~1.5 microns of photoresist.
Optimize the photlithography procedure. There are two important time constants that you
will be able to adjust: exposure time and developing time. Both are very important. Look
at exposure time between 1 and 5 minutes. Developing times could range from 10 to 100
seconds.
The way that you will assess your results is by inspection under the optical microscope.
Once you have determined your optimum conditions coat two of your oxide films, pattern
and etch using BOE as described below.
After the etch ash the photresist using the RIE and characterize the morphology with the surface profiler.
II. Oxide Etching
Characteroze your oxide thickness and then determine the etch rate by measuring the
etching time in BOE.