CHEN/PHGN  435/535 - Interdisciplinary Silicon Processing Lab
Spring 2001

Prelab IA: RCA Clean, Thermal Oxidation

Name: __________________________

 Read oxidation lab procedures and Campbell p. 340 - 344, 68 -75

  1. The RCA clean has 3 steps. Name them and describe their function
  2. i.)

    ii.)

    iii.)

    You have grown a layer of silicon oxide that is 1500 Å thick.

  3. How much (thickness) silicon was oxidized?
  4.  

     

  5. Using rate constants from Campbell estimate how long it took to grow this film from clean silicon in dry oxygen at T = 1100 ºC?
  6.  

     

     

     

  7. Similarly, estimate how long the process would take in steam at T = 1000 ºC?
  8.  

     

     

     

  9. Looking at your wafer under white fluorescent lighting, what color is it? What phenomenon causes these colors?