CHEN/PHGN  435/535 - Interdisciplinary Silicon Processing Lab
Spring 2001

Prelab ID:  Spin-on Glass and Doping

Name: __________________________

Read spin-on glass lab procedures and Campbell p. 39 - 58

  1. Using the values found in Chapter 8, Table I calculate the diffusivity of phosphorous at T = 1000 C?

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  2. Approximately how far will phosphorous diffuse in silicon after an hour at T = 1000 C?

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  3. What pressure must the evaporator reach before metallization can begin?

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  4. What are the purposes behind slowly ramping the power source on the aluminum evaporator?

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  5. What is the sheet resistivity of a silicon layer that is 0.5 microns thick and   doped with 1017 boron atoms/cm3?