Session I: Procedures, Tools, and Process
Optimization
A: RCA Clean, Wet and Dry Oxidation, Ellipsometry
Goals:
- Learn the RCA cleaning procedure, which is designed to remove impurities such as include
SiO2, dust, organic, ionic, and metal contaminants
- Determine silicon oxidation kinetics as a function of ambient (steam or O2)
and temperature (950 - 1100 ºC).
- Learn how to characterize film thickness using ellipsometry.
Procedures
B: Spin Photoresist, Ashing, Profilometry
Goals:
- Learn how to apply and bake photoresist.
- Determine photoresist thickness as a function of spin speed.
- Learn how to operate plasma etcher.
- Determine ashing rate as a function plasma power, flowrate, pressure.
- Learn how to characterize film thickness using profilometry.
Procedures
C: Photolithography, Wet and Dry Oxide Etching
Goals:
- Learn how to use the Cobilt mask aligner.
- Determine optimum exposure time as function of photo resist type and thickness.
- Determine silicon dioxide etching rate in both BOE and in RIE using CHF3.
- Pattern and etch an oxide wafer.
Procedures
D: Diffusion, Sheet Resistance, Evaporator
Goals:
- Learn how apply spin-on-glass.
- Determine doping levels for both p-type and n-type as a function of time and
temperature.
- Learn how to characterize sheet resistance and junction depth.
- Learn how to deposit metallic films using the aluminum evaporator.
Procedures