Bibliography - R. T. Collins

  1.  “Integral equations applied to wave propogation: Modeling the tip of a near-field scanning optical microscope,” C. M. Kelso, P. D. Flammer, J. A. DeSanto, R. T. Collins,  Accepted  J. Opt. Soc. of Am. A.
  2. “A New Interdisciplinary Silicon Processing Laboratory”, C. A. Wolden and R. T. Collins, Proceedings of the AIChE Topical Conference on Chemical Engineering in the New Millennium, in press 2000.
  3. "Direct Patterning of Hydrogenated Amorphous Silicon by Near Field Scanning Optical Microscopy", R. E. Hollingsworth, W. C. Bradford, M. K. Herndon, J. D. Beach and R. T. Collins, to be published in Proceedings of the Spring 2000 Meeting of the Materials Research Society, San Francisco, CA.
  4. “Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells,” M. K. Herndon, W. C. Bradford, R. T. Collins, B. E. Hawkins, T. F. Kuech, D. J. Friedman and S. R. Kurtz, Appl. Phys. Lett. 77, 100 (2000).
  5. “Evidence for grain boundary assisted diffusion of sulfur in polycrystalline CdS/CdTe heterojunctions,” M. K. Herndon, A. Gupta, V. Kaydanov and R. T. Collins, Appl. Phys. Lett. 75, 3503 (1999).
  6. “Resistless Patterning of Hydrogenated Amorphous Silicon,” R. E. Hollingsworth, M. K. Herndon, R. T. Collins, J. D. Benson, J. H. Dinan and J. N. Johnson,  submitted to the Proceedings of the Spring 1999 Meeting of the Materials Research Society.
  7. “Feasibility of III-nitride semiconductors for use in hydrogen-evolving solar cells,” J. D. Beach Jr., O. Khaselev, J. A. Turner, R. T. Collins, and J. M. Redwing, Proceedings of the 1999 Honda Initiation Grant Symposium, May 20, 1999, Columbus, Ohio.
  8. “Near-Field Scanning Optical Nanolithography using a-Si:H Photoresists,” M. K. Herndon, R. T. Collins, R. E. Hollingsworth, P. R. Larson, and M. B. Johnson, Appl. Phys. Lett. 74, 141 (1999).
  9. “Sulfur diffusion in polycrystalline thin-film CdTe solar cells,” M. H. Aslan, W. Song, J. Tang, D. Mao, R. T. Collins, D. H. Levi, R. K. Ahrenkiel, S. C. Lindstrom and M. B. Johnson,  Materials Research Society Symposium Proceedings  Fall 1997 “Thin-Film Structures for Photovoltaics,” Vol. 485, p. 203 (1998).
  10. “Porous Silicon: From Luminescence to LED’s,” R. T. Collins, P. M. Fauchet, and M. A. Tischler,  Postepy Fizyki 48, 207 (1997).
  11. “Porous Silicon: From Luminescence to LED’s,” R. T. Collins, P. M. Fauchet, and M. A. Tischler,  Parity 12, 18 (1997).
  12. “Luminescence from porous silicon: Mechanism debated, R. T. Collins, P. M. Fauchet, and M. A. Tischler,  Physics Today 50, 83 (1997).
  13. “Effect of CdCl2 Treatment of CdS Films on CdTe/CdS Solar Cells", W. Song, D.  Mao, L. Feng,Y. Zhu, M.H. Aslan, R.T. Collins, and J.U. Trefny, Proceedings of the  Materials Research Society Meeting, Thin Films for Photovoltaics and Related  Device Applications, Spring 1996,(in print).
  14. “Porous Silicon: From Luminescence to LED’s,” R. T. Collins, P. M. Fauchet, and M. A. Tischler, Physics Today 50, January 1997, p. 24.
  15. “The structural, optical and electrical properties of vacuum evaporated Cu-doped ZnTe polycrystalline thin films,” L. Feng, D. Mao, J. Tang, R. T. Collins, and J. U. Trefny, J. Electron. Materials 25, 1422 (1996)
  16. “Interdiffusion in polycrystalline thin film CdS/CdTe solar Cells,” D. Mao, L. Feng, Y. Zhu, J. Tang, W. Song, R. Collins, D. L. Williamson, and J. U. Trefny, 13th NREL Photovoltaic Program Review, AIP Conference Proceedings 353, Harin S. Ullal and C. Edwin Witt, ed. p.320, 1995.
  17. "Fundamental properties of cuprate superconductors as probed by infrared spectroscopy," Z. S Schlesinger, R. T. Collins, L. D. Rotter, F. Holtzberg, C. Feild, U. Welp, G. W. Crabtree, J. Z. Liu, Y. Fang, K. G. Vandervoort and S. Fleshler,  Physica C 235-240 pt 1, 49 (1994).
  18. "Porous Silicon Sheds a New Light on OEICs," R. T. Collins and M. A. Tischler, IEEE Circuits and Devices 9, 22 (1993).
  19. "Erbium-Doped Silicon Prepared by UHV/CVD," D. B. Beach, R. T. Collins, F. K. Legoues, and J. O. Chu, Mat. Res. Soc. Symp. Proc.282, 397 (1993).
  20. "Stability of Visible Luminescence from Porous Silicon," J. L. Batstone, M. A. Tischler, and R. T. Collins, Appl. Phys. Lett.62,  2667 (1993).
  21. "On the Relationship of Porous Silicon and Siloxene," M. A. Tischler and R. T. Collins, Sol. State Comm. 84, 819 (1992).
  22. "Photoinduced Hydrogen Loss from Porous Silicon," R. T. Collins, M. A. Tischler, and J. H. Stathis, Appl. Phys. Lett. 61, 1649 (1992).
  23. "Optical Properties of Porous Silicon and Stability of the Luminescence," M. A. Tischler, R. T. Collins, J. C. Tsang, and J. H. Stathis, Proceedings of the 1992 Electronic Materials Conference, Cambridge, MA, June 24-26, 1992.
  24. "Infrared Study of Ba1-xKxBiO3 from Charge Density Wave Insulator to Superconductor," S. H. Blanton, R. T. Collins, K. H. Kelleher, L. D. Rotter, Z. Schlesinger, D. G. Hinks, and Y. Zheng, Phys. Rev. B 47, 996 (1993).
  25. "Raman Scattering from H or O Terminated Porous Silicon," J. C. Tsang, M. A. Tischler, and R. T. Collins, Appl. Phys. Lett.  60, 2279 (1992).
  26. "Optical Characteristics of Porous Silicon," M. A. Tischler, R. T. Collins, J. C. Tsang, J. H. Stathis, J. L. Batstone, and S. Zollner, Mater. Res. Soc. Symp. Proc.  256, 189 (1992).
  27. "Photoluminescence from Pseudomorphically Strained Si/Si1-xGex multiple Quantum Wells Grown on Silicon,"  S. Zollner, R. T. Collins, M. S. Goorsky, P. J. Wang, J. J. Tejwani, J. O. Chu, B. S. Meyerson, and F. K. LeGoues, Proceedings of the SPIE meeting on Spectroscopic Characterization Techniques for Semiconductor Technology IV, 1678, 81 (1992).
  28. "Silicon Emits Light, But How?" R. T. Collins and M. A. Tischler, Laser Focus World  28, 18 (1992).
  29. "Luminescence Degradation in Porous Silicon," M. A. Tischler, R. T. Collins, J. H. Stathis, and J. C. Tsang, Appl. Phys. Lett. 60, 639 (1992).
  30. "Dependence of the Infrared Properties of Single-Domain Y1Ba2Cu3O7-x on Oxygen Content," L. D. Rotter, Z. Schlesinger, R. T. Collins, F. Holtzberg, C. Feild, U. W. Welp, G. W. Crabtree, J. Z. Liu, Y. Fang, K. G. Vandervoort, and S. Fleshler, Phys. Rev. Lett.  67, 2741 (1991).
  31. "Infrared Properties of High Temperature Superconductors in the Normal and Superconducting States,"  R. T. Collins, L. D. Rotter, Z. Schlesinger, F. Holtzberg, C. Feild, U. W. Welp, G. W. Crabtree, Y. Fang, K. G. Vandervoort and J. Z. Liu, Proceedings of the IWEPM, Tsukuba, Japan, July 29-31, 1991, P39-55.
  32. “Properties of the Normal and Superconducting States of High-Tc Superconductors Determined by Infrared Conductivity," L. D. Rotter, Z. Schlesinger, R. T. Collins, F. Holtzberg, C. Feild, U. W. Welp, G. W. Crabtree, Y. Fang, K. G. Vandervoort, S. Fleshler, and J. Z. Liu, Chin. J. Phys.  30, 271 (1992).
  33. "Infrared Properties of High Tc Superconductors," Z. Schlesinger, L. D. Rotter, R. T. Collins, F. Holtzberg, C. Feild, U. Welp, G. W. Crabtree, J. Z. Liu, Y. Fang, and K. G. Vandervoort, Proceedings of M2S-HTSC III, Kanazawa, Japan, July 1991, Physica C  185-189, 57 (1991).
  34. "An Introduction to Infrared Properties of High Tc Superconductors," Z. Schlesinger, L. D. Rotter, R. T. Collins, F. Holtzberg, C. Feild, U. Welp, G. W. Crabtree, J. Z. Liu, Y. Fang, and K. G. Vandervoort, Proceedings of the TOSHIBA International School of Superconductivity, Nagoya, Japan, July, 1991.
  35. "Dynamic Properties of a High Tc Superconductor: Direct Evidence for Non-BCS Behavior," R. T. Collins, Z. Schlesinger, F. Holtzberg, C. H. Feild, U. Welp, G. W. Crabtree, J. Z. Liu, Y. Fang, Phys. Rev. B  43, 8701 (1991).
  36. "Field Effect Transistor Structure Based on Strain Induced Polarization Charges," D. L. Smith, R. T. Collins, T. F. Kuech, and C. Mailhiot, Materials Research Society Symposium Proceedings,  160, 801 (1990).
  37. "Infrared Studies of the Superconducting Energy Gap and Normal State Dynamics of Y1Ba2Cu3O7 and Ba0.6K0.4BiO3," Z. Schlesinger and R. T. Collins, MRS Bulletin/June 1990, p. 38.
  38. "Superconducting Energy Gap and Normal State Conductivity of a Single-Domain Y-Ba-Cu-O Crystal," Z. Schlesinger, R. T. Collins, F. Holtzberg, C. Feild, S. H. Blanton, U. Welp, G. W. Crabtree, and Y. Fang, Phys. Rev. Lett.  65, 801 (1990).
  39. "Infrared Studies of the Superconducting Energy Gap and Normal State Dynamics of the High Tc Superconductor Y1Ba2Cu3O7," Z. Schlesinger, R. T. Collins, F. Holtzberg, C. Feild, G. Koren, and Gupta, Phys. Rev. B. 41, 11237 (1990).
  40. "Field Effect Transistor Structure Based on Strain Induced Polarization Charges," T. F. Kuech, R. T. Collins, D. L. Smith, and C. Mailhiot, J. Appl. Phys.  67, 2650 (1990).
  41. "Infrared Conductivity in Superconductors with a Finite Mean Free Path," N. E. Bickers, D. J. Scalapino, R. T. Collins, and Z. Schlesinger, Phys. Rev. B. 42, 67 (1990).
  42. "Infrared Evidence for Gap Anisotropy in Y1Ba2Cu3O7," R. T. Collins, Z. Schlesinger, F. Holtzberg, and C. Feild, Phys. Rev. Lett.  63, 422 (1989).
  43. "Superconducting energy gap and a normal-state excitation in Ba0.6K0.4BiO3," Z. Schlesinger, R. T. Collins, J. A. Calise, D. G. Hinks, A. W. Mitchell, Y. Zheng, B. Dabrowski, N. E. Bickers, and D. J. Scalapino, Phys. Rev. B1,  40, 6862 (1989).
  44. "Infrared Measurement of a Tl2Ba2CaCu2O8-x Film," Z. Schlesinger, R. T. Collins, N. C. Yeh, W. Y. Lee, and S. S. P. Parkin, Proceedings of the International Conference on Materials and Mechanisms of Superconductivity in High Temperature Superconductors, Stanford, July 23-28, 1989.
  45. "Infrared Studies of Oxide Superconductors in the Normal and Superconducting States," R. T. Collins, Z. Schlesinger, F. Holtzberg, C. Feild, G. Koren, A. Gupta, D. G. Hinks, A. W. Mitchell, Y. Zheng, and B. Dabrowski, in Springer Series in Solid-State Sciences, Vol. 89, Editors: H. Fukuyama, S. Maekawa, and A. P. Malozemoff, Springer-Verlag, Berlin (1989) p. 289.
  46. "Infrared Studies of the Normal and Superconducting States of Y1Ba2Cu3O7," R. T. Collins, Z. Schlesinger, F. H. Holtzberg, P. Chaudhari, and C. A. Feild, IBM J. Res. Develop  33, , 238 (1989).
  47. "Reflectivity and Conductivity of Y-Ba-Cu-0," R. T. Collins, Z. Schlesinger, F. Holtzberg, P. Chaudhari, and C. Feild, Phys. Rev. B1  39, , 6571 (1989).
  48. "Infrared study of anisotropy in single crystal La2-xSrxCuO4 ," R. T. Collins, Z. Schlesinger, G. V. Chandrashekhar, and M. W. Shafer, Phys. Rev. B  39, 2251 (1989).
  49. "Superconducting energy gap of BaPb1-xBixO3," Z. Schlesinger, R. T. Collins, B. A. Scott, J. A. Calise, Phys. Rev. B1 38,  9284 (1988).
  50. "Infrared studies of high temperature superconductors," R. T. Collins, Z. Schlesinger, D. L. Kaiser, F. Holtzberg, G. V. Chandrashekhar, and M. W. Shafer, Proceedings of the  Fourth International Conference on Infrared Physics, Edited by R. Kesserling and F. K. Kneubuhl, Zurich, August 22-26, 1988, p. 102.
  51. "Infrared studies of high temperature superconductors," Z. Schlesinger, R. T. Collins, D. L. Kaiser, F. Holtzberg, G. V. Chandrashekhar, M. W. Shafer, and T. M. Plaskett, Proceedings to the International Conference on High-Temperature Superconductors and Materials and Mechanisms of Superconductivity, Physica C  153-155,  1734 (1988).
  52. "Antiferromagnetic resonance in La2-xCuO4-y ," R. T. Collins, Z. Schlesinger, M. W. Shafer, and T. R. McGuire, Phys. Rev. B1 37,  5817 (1988).
  53. "Properties of epitaxial films of Y1Ba2Cu3O7," P. Chaudhari, R. T. Collins, P. Freitas, R. J. Gambino, J. R. Kirtley, R. H. Koch, R. B. Laibowitz, F. K. LeGoues, T. R. McGuire, T. Penney, Z. Schlesinger, Armin P. Segmuller, S. Foner, and E. J. NcNiff, Jr., Phys. Rev. B1 36,  8903 (1987).
  54. "Superconducting energy gap and normal state reflectivity of single crystal Y1Ba2Cu3O7," Z. Schlesinger, R. T. Collins, D. L. Kaiser, and F. Holtzberg, Phys. Rev. Lett. 59,  1958 (1987).
  55. "Comparative study of superconducting energy gaps in oriented films and polycrystalline bulk samples of Y1Ba2Cu3O7," R. T. Collins, Z. Schlesinger, R. H. Koch, R. B. Laibowitz, T. S. Plaskett, P. Freitas, W. J. Gallagher, R. L. Sandstrom, and T. R. Dinger, Phys. Rev. Lett. 59,  704 (1987).
  56. "Electronic Properties of Quantum Wells in Perturbing Fields," R. T. Collins, L. Vina, W. I. Wang, C. Mailhiot, and D. L. Smith, Proceedings of SPIE,  792, , 2 (1987).
  57. "Normal State reflectivity and superconducting energy gap measurement of La2-xSrxCuO4," Z. Schlesinger, R. T. Collins, M. W. Shafer, and E. M. Engler, Phys. Rev. B1 36,  5275 (1987).
  58. "Tunneling and infra-red measurements of the energy gap in the high critical temperature superconductor Y1Ba2Cu3O7," J. R. Kirtley, R. T. Collins, Z. Schlesinger, W. J. Gallagher, R. L. Sandstrom, T. R. Dinger, and D. A. Chance, Phys. Rev. B1 35,  8846 (1987).
  59. "Observation of a low-energy infrared anomoly in superconducting La2-xSrxCuO4," Z. Schlesinger, R. T. Collins, and M. W. Shafer, Phys. Rev. B1,  35,  7232 (1987).
  60. "Reply to Comment on "Excitonic coupling in GaAs/Al1-xGaxAs Quantum Wells in an Electric Field," L. Vina, R. T. Collins, E. E. Mendez, and W. I. Wang, Phys. Rev. Lett.  59, 602 (1987).
  61. "Mixing between heavy-hole and light-hole excitons in GaAs/Al1-xGaxAs quantum wells in an electric field," R. T. Collins, L. Vina, W. I. Wang, L. L. Chang, L. Esaki, K. v. Klitzing, and K. Ploog, Phys. Rev. B15 36,  1531 (1987).
  62. "Excitonic coupling in GaAs/Al1-xGaxAs quantum wells in an electric field," L. Vina, R. T. Collins, E. E. Mendez, and W. I. Wang, Phys. Rev. Lett. 58,  832 (1987).
  63. "Excitonic transitions and optically excited transport in GaAs/Al1-xGaxAs quantum wells in an electric field," R. T. Collins, L. Vina, W. I. Wang, K. v. Klitzing, and K. Ploog,Superlattices and Microstructures  3,  291 (1987).
  64. "Optical Spectroscopy of GaAs/Al1-xGaxAs quantum wells under an external electric field," L. Vina, R. T. Collins, E. E. Mendez, W. I. Wang, L. L. Chang, and L. Esaki, Superlattices and Microstructures  3,  9 (1987).
  65. "Observations of forbidden excitonic transitions in GaAs/Al1-xGaxAs quantum wells in an electric field," R. . Collins, L. Vina, W. I. Wang, L. L. Chang, L. Esaki, . v. Klitzing, and K. Ploog, Proceedings of the 18th International Conference on the Physics of Semiconductors, editor Olof Engstrom, World Scientific, p. 521 (1987).
  66. "Summary Abstract: A photocurrent spectroscopy study of GaAs/Al1-xGaxAs quantum wells," R. T. Collins, K. v. Klitzing, and K. Ploog, J. Vac. Sci. TechnolB,  4, , 986 (1986).
  67. "Photoexcited transport in GaAs/Al1-xGaxAs quantum wells," R. T. Collins, K. v. Klitzing, and K. Ploog, Appl. Phys. Lett.,  49, 406 (1986).
  68. "Comparative study of the effect of an electric field on the photocurrent and photoluminesence of GaAs-GaAlAs quantum wells," L. Vina, R. T. Collins, E. E. Mendez, and W. I. Wang, Phys. Rev. B,  33, 5939 (1986).
  69. "Photocurrent spectroscopy study of GaAs/Al1-xGaxAs quantum wells in an electric field," R. T. Collins, K. v. Klitzing, and K. Ploog, Phys. Rev. B,  33, 4378 (1986).
  70. "Optical investigations of electron transport through GaAs/AlAs heterostructures," T. E. Schlesinger, R. T. Collins, T. C. McGill, and R. D. Burnham, J. Appl. Phys.,  58, 852 (1985).
  71. "Photovoltaic Investigations of GaAs/AlAs heterostructures," T. E. Schlesinger R. T. Collins, T. C. McGill, and R. D. Burnham, Superlattices and Microstructures,  1, 417 (1985).
  72. "Inelastic and resonant tunneling in GaAs/AlAs heterostructures," R. T. Collins, A. R. Bonnefoi, J. Lambe, T. C. McGill, and R. D. Burnham, Proceedings of the 17th International Conference on the Physics of Semiconductors, edited by J. D. Chadi and W. A. Harrison, 1985 by Springer-Verlag, NY, Inc. p. 437.
  73. "Resonant Tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition," A. R. Bonnefoi, R. T. Collins, T. C. McGill, R. D. Burnham, and F. A. Ponce, Appl. Phys. Lett.,  46, 285 (1985).
  74. "Photovoltaic Investigations of GaAs/AlAs heterostructures," T. E. Schlesinger R. T. Collins, T. C. McGill, and R. D. Burnham, Appl. Phys. lett.,  45, 686 (1984).
  75. "Summary Abstract: Elastic and Inelastic tunneling characteristics of AlAs/GaAs heterojunctions," R. T. Collins, J. Lambe, T. C. McGill, and R. D. Burnham, J. Vac. Sci. Technol. B,  2, 597 (1984).
  76. "Summary Abstract: Inelastic tunneling characteristics of AlAs/GaAs heterojunctions," R. T. Collins, J. Lambe, T. C. McGill, and R. D. Burnham, J. Vac. Sci. Technol. B  2, 201 (1984).
  77. "Inelastic tunneling characteristics of AlAs/GaAs heterojunctions," R. T. Collins, J. Lambe, T. C. McGill, and R. D. Burnham, Appl. Phys. Lett.,  44, 532 (1984).
  78. "Electronic properties of deep levels in p-type CdTe," R. T. Collins,  and T. C. McGill, J. Vac. Sci. Technol. A,  1, 1633 (1983).
  79. "A DLTS study of deep levels in n-type CdTe," R. T. Collins, T. F. Kuech, and T. C. McGill, J. Vac. Sci. Technol.  21, 191 (1982).