Instrument Details

Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a highly surface-sensitive analytical technique used to obtain elemental, isotopic, and molecular information from the surface of solid materials and compacted powders. This TOF-SIMS instrument features a Primary Ion Beam operating at 30 keV with a three-lens BiMn cluster nanoprobe. For sputtering sources (Secondary Ion Beams) the TOF.5 can utilize either a Thermal ionization Cesium source, an Oxygen electron impact gas ion source, or a fully integrated gas cluster ion source. The Bi Nanoprobe source provides high analysis currents of up to 20 pA for trace detection spectrometry and high-end depth profiling.

Each point of impact on the sample from the primary ion beam contains the entire mass spectrum as well as the X, Y and Z coordinates of that point of impact. With this information, we can create detailed ion images of the distribution of any species of interest on our sample, both in 2D and in 3D (in depth profile mode).

• High sensitivity with the ability to detect species in the parts-per-million (ppm) to parts-per-billion (ppb) range
• High mass resolution of ~0.00x amu
• Capable of ~80nm spatial resolution
• Can obtain elemental and molecular information from a mass range of 0 to 10,000+ amu simultaneously
• Depth profiling with parallel ion detection
• Species mapping in both 2D and 3D
• Ability to analyze insulators and conductors
• Retrospective analysis 

Added Features

• Argon Gas Cluster Source provides the ability to detect high mass polymers and depth profile through complex organic materials.
• In-situ Ga Focused Ion Beam can analyze extremely rough samples, samples with voids or samples that exhibit strong local variations in density.
• Extended Dynamic Range Analyzer extends dynamic range up to seven orders of magnitude, allowing for simultaneous detection of normally saturated matrix species and trace species.
• Hermetically Sealed Transfer Vessel ability to analyze atmospheric or moisture-sensitive samples.