Furnaces

Furnaces

DIFFUSION FURNACE
Tube furnace used in the manufacturing of semiconductor components. Used to add doping impurities into high purity silicon wafers, thereby creating embedded semiconductor devices.

DRY OXIDATION FURNACE
Furnace used for growing dry oxides.

HIGH TEMPERATURE FURNACE
6″x6″x6″ muffle furnace, capable of holding sustained temperatures of up to 1400 C.

RAPID THERMAL ANNEALER
The ULVAC-RIKO MILA-5000 mini lamp annealer provides rapid heating of a wafer from ambient temperature to approximately desired temperature in controlled gas environments. As soon as the wafer reaches this temperature, it is held there for a few seconds and then cooled. Temperature range: room temperature to about 1200 °C. Sample size: 20 x t2 (mm).

REACTIVE ION ETCHER
The AutoGlow 200 reactive ion etcher is a table-top plasma system that can be used for plasma cleaning or RIE processing with O2 and SF6 plasmas. It can process as low as 10 W, or as high as 300 W in one-watt increments. The AutoGlow 200 is suitable for lab, failure analysis, or production applications. It can perform a host of applications, including cleaning, removing photoresist, prebonding, organic removal, activation and plasma etching.

VACUUM FURNACE
A vacuum furnace is a type of furnace in which the product in the furnace is surrounded by a vacuum during processing. The absence of air or other gases prevents oxidation and heat loss from the product through convection, and removes a source of contamination.

WET OXIDATION FURNACE
Wet oxidation uses clean steam. The H2O molecule is smaller than the O2 molecule and diffuses through the silicon dioxide layer faster. This allows for the growth of thicker films.